| Quarter > Kate Gleason Col Of Engrng > Microelectronic Engineering > Silicon Processes > Description |
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| Course Description |
| Course Number: |
0305-632 |
Course Title: |
Silicon Processes |
Description: |
| The fundamental silicon based processing steps introduced in 0305-350 are expanded upon to cover state-of-the-art issues such as thin oxide growth, atomistic diffusion mechanisms, advanced ion implantation and rapid thermal processing (RTP). Physical vapor deposition (PVD) to form conductive and insulating films is introduced. MOS capacitance voltage measurement and surface change analysis are studied. These topics are essential for understanding the fabrication of modern IC's. Computer simulation tools (i.e. SUPREM) are used to model processes, build device structures, and predict electrical characteristics, which are compared to actual devices that are fabricated in the associated laboratory. (0305-350, 560) Class 3, Lab 3, Credit 4 (F, W) |
Course Notes: |
| 0305-632 PREREQUISITES: 0305-350, 0301-482 COREQUISITE: 0305-560 |
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