| Quarter > Kate Gleason Col Of Engrng > Microelectronic Engineering > Nanoscale Cmos & Beyond > Description |
|
| Course Description |
| Course Number: |
0305-707 |
Course Title: |
Nanoscale Cmos & Beyond |
Description: |
| This coures is an in-depth study of the principles and practice of scaling-driven CMOS front and back end processing. The course discusses the Semiconductor Industry Association (SIA) International Technology Roadmap for Semiconductors (ITRS) and exposes students to the next generation of nanometer-scale CMOS with device concepts that include quantum mechanical phenomena such as channel confinement and dopant fluctuations. Front end processing includes super steep retrograde wells, high-k gate insulators, metal gate, and ultra shallow source/ drains. Back end topics include interconnect modeling and delay, Low k dielectric and copper damanscence processes. The use of novel substrates such as strained silicon, SiGe and Ge will be described. (0305-560, 701, 702, of nanometer-scale CMOS with device concepts that take advantage of 703) Class 4, Credit 4 (W) |
Course Notes: |
| 0305-707 PREREQUISITES: 0305-560, 701, 702, 703 |
|